C3M0350120J-TR Wolfspeed, Inc.

Description: SIC, MOSFET, 350M,1200V, TO-263-, Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 1000 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 15 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 40.8W (Tc), Rds On (Max) @ Id, Vgs: 455mOhm @ 3.6A, 15V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).