CAB006A12GM3T MACOM
Виробник: MACOM
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
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Технічний опис CAB006A12GM3T MACOM
Description: MOSFET 2N-CH 1200V 200A MODULE, Supplier Device Package: Module, Vgs(th) (Max) @ Id: 3.6V @ 69mA, Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V, Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V, Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V, Current - Continuous Drain (Id) @ 25°C: 200A (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Technology: Silicon Carbide (SiC), Operating Temperature: -40°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Box.
Інші пропозиції CAB006A12GM3T
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CAB006A12GM3T | Виробник : Wolfspeed, Inc. |
Description: MOSFET 2N-CH 1200V 200A MODULE Supplier Device Package: Module Vgs(th) (Max) @ Id: 3.6V @ 69mA Gate Charge (Qg) (Max) @ Vgs: 708nC @ 15V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 20400pF @ 800V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
товару немає в наявності |
|
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CAB006A12GM3T | Виробник : Wolfspeed |
Discrete Semiconductor Modules SiC, Module, 6mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM |
товару немає в наявності |