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Технічний опис CAS530M12BM3T Wolfspeed
Description: SIC, MODULE, 530A, 1200V, 62MM,, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 2000W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 645A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V, Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V, Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V, Vgs(th) (Max) @ Id: 3.6V @ 127mA.
Інші пропозиції CAS530M12BM3T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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CAS530M12BM3T | Wolfspeed, Inc. |
 Description: SIC, MODULE, 530A, 1200V, 62MM,Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2000W (Tc) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 645A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V Vgs(th) (Max) @ Id: 3.6V @ 127mA |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. |
 |
CAS530M12BM3T | Wolfspeed |
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Module, Industrial, Pre-Applied TIM |
товару немає в наявності |
В кошику од. на суму грн. |
| CAS530M12BM3T |
|
Виробник: Wolfspeed, Inc.
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
Description: SIC, MODULE, 530A, 1200V, 62MM,
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2000W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 645A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 38900pF @ 800V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1362nC @ 15V
Vgs(th) (Max) @ Id: 3.6V @ 127mA
товару немає в наявності
Мінімальне замовлення: 10 шт
В кошику
од. на суму грн.
| CAS530M12BM3T |
|
Виробник: Wolfspeed
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Module, Industrial, Pre-Applied TIM
Discrete Semiconductor Modules SiC, Module, 530A, 1200V, 62mm, BM3, Half-Bridge, Module, Industrial, Pre-Applied TIM
товару немає в наявності
В кошику
од. на суму грн.