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CBR08P65D

CBR08P65D Bruckewell

CBR08P65D.pdf Виробник: Bruckewell
Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3+142.99 грн
Мінімальне замовлення: 3
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Технічний опис CBR08P65D Bruckewell

Description: SIC SCHOTTKY DIODE,650V,8A,TO-25, Packaging: Tape & Box (TB), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 29A, Supplier Device Package: TO-252-2L, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 25 µA @ 650 V, Qualification: AEC-Q101.

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CBR08P65D CBR08P65D Виробник : Bruckewell CBR08P65D.pdf Description: SIC SCHOTTKY DIODE,650V,8A,TO-25
Packaging: Tape & Box (TB)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-252-2L
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 25 µA @ 650 V
Qualification: AEC-Q101
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