Технічний опис CBR35-060P Central Semiconductor
Description: BRIDGE RECT 1P 600V 35A 4CASE FP, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A, Current - Average Rectified (Io): 35 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: 4-Case FP, Technology: Standard, Operating Temperature: -65°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: QC Terminal, Package / Case: 4-Square, FP, Packaging: Bulk.
Інші пропозиції CBR35-060P
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
CBR35-060P | Central Semiconductor Corp |
 Description: BRIDGE RECT 1P 600V 35A 4CASE FPCurrent - Reverse Leakage @ Vr: 10 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A Current - Average Rectified (Io): 35 A Voltage - Peak Reverse (Max): 600 V Supplier Device Package: 4-Case FP Technology: Standard Operating Temperature: -65°C ~ 150°C (TJ) Diode Type: Single Phase Mounting Type: QC Terminal Package / Case: 4-Square, FP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. |
| CBR35-060P |
|
Виробник: Central Semiconductor Corp
Description: BRIDGE RECT 1P 600V 35A 4CASE FP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: 4-Case FP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, FP
Packaging: Bulk
Description: BRIDGE RECT 1P 600V 35A 4CASE FP
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 17.5 A
Current - Average Rectified (Io): 35 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: 4-Case FP
Technology: Standard
Operating Temperature: -65°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: QC Terminal
Package / Case: 4-Square, FP
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.