Технічний опис CDBDSC5650-G Comchip Technology
Description: DIODE SIL CARB 650V 21.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 424pF @ 0V, 1MHz, Current - Average Rectified (Io): 21.5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Інші пропозиції CDBDSC5650-G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
CDBDSC5650-G | Comchip Technology |
 Description: DIODE SIL CARB 650V 21.5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 424pF @ 0V, 1MHz Current - Average Rectified (Io): 21.5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
|
|
CDBDSC5650-G | Comchip Technology |
Description: DIODE SIL CARB 650V 21.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 424pF @ 0V, 1MHz Current - Average Rectified (Io): 21.5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CDBDSC5650-G | Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CDBDSC5650-G | Comchip Technology |
Rectifier Diode Schottky SiC 650V 5A 3-Pin(2+Tab) DPAK Tube |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| CDBDSC5650-G |
|
Виробник: Comchip Technology
Description: DIODE SIL CARB 650V 21.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 21.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CDBDSC5650-G |
|
Виробник: Comchip Technology
Description: DIODE SIL CARB 650V 21.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Description: DIODE SIL CARB 650V 21.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 424pF @ 0V, 1MHz
Current - Average Rectified (Io): 21.5A
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| CDBDSC5650-G |
|
Виробник: Comchip Technology
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V
товару немає в наявності
В кошику
од. на суму грн.
| CDBDSC5650-G |
|
Виробник: Comchip Technology
Rectifier Diode Schottky SiC 650V 5A 3-Pin(2+Tab) DPAK Tube
Rectifier Diode Schottky SiC 650V 5A 3-Pin(2+Tab) DPAK Tube
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.