CDBDSC5650-G Comchip Technology
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
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Технічний опис CDBDSC5650-G Comchip Technology
Description: DIODE SIL CARB 650V 21.5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 424pF @ 0V, 1MHz, Current - Average Rectified (Io): 21.5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Інші пропозиції CDBDSC5650-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CDBDSC5650-G | Виробник : Comchip Technology |
 Rectifier Diode Schottky SiC 650V 5A 3-Pin(2+Tab) DPAK Tube |
товару немає в наявності |
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 |
CDBDSC5650-G | Виробник : Comchip Technology |
Description: DIODE SIL CARB 650V 21.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 424pF @ 0V, 1MHz Current - Average Rectified (Io): 21.5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
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CDBDSC5650-G | Виробник : Comchip Technology |
Description: DIODE SIL CARB 650V 21.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 424pF @ 0V, 1MHz Current - Average Rectified (Io): 21.5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V |
товару немає в наявності |
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CDBDSC5650-G | Виробник : Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 5A 650V |
товару немає в наявності |