CDBGBSC101200-G Comchip Technology
Виробник: Comchip TechnologyDescription: DIODE ARRAY SIC 1200V 18A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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Технічний опис CDBGBSC101200-G Comchip Technology
Description: DIODE ARRAY SIC 1200V 18A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 18A (DC), Supplier Device Package: TO-247, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції CDBGBSC101200-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
CDBGBSC101200-G | Виробник : Comchip Technology |
Schottky Diodes & Rectifiers DUAL SiC POWER SCHOTTKY, 10A 1200V |
товару немає в наявності |