Технічний опис CDBJSC101200-G Comchip Technology
Description: DIODE SIL CARB 1.2KV 10A TO220-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 780pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Інші пропозиції CDBJSC101200-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| CDBJSC101200-G | Виробник : Comchip Technology |
 Description: DIODE SIL CARB 1.2KV 10A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 780pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
товару немає в наявності |
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CDBJSC101200-G | Виробник : Comchip Technology |
Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 10A 1200V |
товару немає в наявності |