CDBJSC10650-G Comchip Technology
Виробник: Comchip TechnologyDescription: DIODE SIL CARB 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 710pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220F
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
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Технічний опис CDBJSC10650-G Comchip Technology
Description: DIODE SIL CARB 650V 10A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 710pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220F, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.
Інші пропозиції CDBJSC10650-G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
CDBJSC10650-G | Виробник : Comchip Technology |
SiC Schottky Diodes SiC POWER SCHOTTKY 10A 650V |
товару немає в наявності |