CDF56G7032N TR13 PBFREE Central Semiconductor
| Кількість | Ціна |
|---|---|
| 1+ | 508.34 грн |
| 10+ | 338.07 грн |
| 100+ | 213.67 грн |
| 500+ | 203.20 грн |
| 1000+ | 195.52 грн |
| 2500+ | 172.47 грн |
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Технічний опис CDF56G7032N TR13 PBFREE Central Semiconductor
Description: SURFACE MOUNT MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 155°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V, Power Dissipation (Max): 1.1W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 17.2mA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V, Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V.
Інші пропозиції CDF56G7032N TR13 PBFREE за ціною від 210.65 грн до 452.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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| CDF56G7032N TR13 PBFREE | Central Semiconductor Corp |
 Description: SURFACE MOUNT MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Power Dissipation (Max): 1.1W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| CDF56G7032N TR13 PBFREE | Central Semiconductor Corp |
Description: SURFACE MOUNT MOSFET Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V Drain to Source Voltage (Vdss): 700 V Vgs (Max): +7V, -6V Drive Voltage (Max Rds On, Min Rds On): 6V Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 17.2mA Power Dissipation (Max): 1.1W (Ta), 113W (Tc) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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| CDF56G7032N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Description: SURFACE MOUNT MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2500+ | 210.65 грн |
| CDF56G7032N TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -6V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
Description: SURFACE MOUNT MOSFET
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 6V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 6 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): +7V, -6V
Drive Voltage (Max Rds On, Min Rds On): 6V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 17.2mA
Power Dissipation (Max): 1.1W (Ta), 113W (Tc)
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 452.48 грн |
| 10+ | 351.30 грн |
| 100+ | 284.13 грн |
| 500+ | 232.36 грн |
| 1000+ | 220.50 грн |