CDFG6558N TR13 PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor CorpDescription: SURFACE MOUNT MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V
Power Dissipation (Max): 1.1W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 30.7mA
Supplier Device Package: 8-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -6V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 0 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V
на замовлення 2470 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 722.51 грн |
| 10+ | 572.83 грн |
| 100+ | 477.45 грн |
| 500+ | 438.93 грн |
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Технічний опис CDFG6558N TR13 PBFREE Central Semiconductor Corp
Description: SURFACE MOUNT MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V, Power Dissipation (Max): 1.1W (Ta), 188W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 30.7mA, Supplier Device Package: 8-DFN (8x8), Drive Voltage (Max Rds On, Min Rds On): 6V, Vgs (Max): +7V, -6V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 0 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V.
Інші пропозиції CDFG6558N TR13 PBFREE за ціною від 347.20 грн до 821.60 грн
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CDFG6558N TR13 PBFREE | Виробник : Central Semiconductor |
GaN FETs 650V, 29A, N-Channel Chip, GaN FET, DFN5X6A Package, 13" |
на замовлення 2493 шт: термін постачання 21-30 дні (днів) |
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CDFG6558N TR13 PBFREE | Виробник : Central Semiconductor Corp |
Description: SURFACE MOUNT MOSFET Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 8A, 6V Power Dissipation (Max): 1.1W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 30.7mA Supplier Device Package: 8-DFN (8x8) Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -6V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 0 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 400 V |
товару немає в наявності |