CGD65A130S2-T13 Cambridge GaN Devices
Виробник: Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
Description: 650V GAN HEMT, 130MOHM, DFN8X8.
Packaging: Cut Tape (CT)
Package / Case: 16-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V
FET Feature: Current Sensing
Vgs(th) (Max) @ Id: 4.2V @ 4.2mA
Supplier Device Package: 16-DFN (8x8)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V
на замовлення 3306 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 581.13 грн |
| 10+ | 379.95 грн |
| 100+ | 278.08 грн |
| 500+ | 222.30 грн |
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Технічний опис CGD65A130S2-T13 Cambridge GaN Devices
Description: 650V GAN HEMT, 130MOHM, DFN8X8., Packaging: Tape & Reel (TR), Package / Case: 16-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V, FET Feature: Current Sensing, Vgs(th) (Max) @ Id: 4.2V @ 4.2mA, Supplier Device Package: 16-DFN (8x8), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): +20V, -1V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V.
Інші пропозиції CGD65A130S2-T13
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CGD65A130S2-T13 | Виробник : Cambridge GaN Devices |
Description: 650V GAN HEMT, 130MOHM, DFN8X8. Packaging: Tape & Reel (TR) Package / Case: 16-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 182mOhm @ 900mA, 12V FET Feature: Current Sensing Vgs(th) (Max) @ Id: 4.2V @ 4.2mA Supplier Device Package: 16-DFN (8x8) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 12 V |
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