CGD65B240SH2 Cambridge GaN Devices
Виробник: Cambridge GaN DevicesDescription: 650V GAN HEMT, 240MOHM, DFN5X6.
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): +20V, -1V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V
Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V
Vgs(th) (Max) @ Id: 4.2V @ 2.3mA
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 338.89 грн |
| 10+ | 226.88 грн |
| 100+ | 167.96 грн |
| 500+ | 135.88 грн |
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Технічний опис CGD65B240SH2 Cambridge GaN Devices
Description: 650V GAN HEMT, 240MOHM, DFN5X6., Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): +20V, -1V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V, Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V, Vgs(th) (Max) @ Id: 4.2V @ 2.3mA.
Інші пропозиції CGD65B240SH2
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CGD65B240SH2 | Виробник : Cambridge GaN Devices |
Description: 650V GAN HEMT, 240MOHM, DFN5X6. Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A Supplier Device Package: 8-DFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): +20V, -1V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 12 V Rds On (Max) @ Id, Vgs: 336mOhm @ 500mA, 12V Vgs(th) (Max) @ Id: 4.2V @ 2.3mA |
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