-2,00x1.25x,80mm.jpg "CIG21W4R7MNE")
CIG21W4R7MNE Samsung Electro-Mechanics
Виробник: Samsung Electro-Mechanics
Description: FIXED IND 4.7UH 650MA 300MOHM SM
Inductance: 4.7 µH
Inductance Frequency - Test: 1 MHz
Current Rating (Amps): 650 mA
DC Resistance (DCR): 300mOhm
Operating Temperature: -40°C ~ 125°C
Type: Multilayer
Shielding: Shielded
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
Package / Case: 0805 (2012 Metric)
Tolerance: ±20%
Packaging: Tape & Reel (TR)
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Технічний опис CIG21W4R7MNE Samsung Electro-Mechanics
Description: FIXED IND 4.7UH 650MA 300MOHM SM, Inductance: 4.7 µH, Inductance Frequency - Test: 1 MHz, Current Rating (Amps): 650 mA, DC Resistance (DCR): 300mOhm, Operating Temperature: -40°C ~ 125°C, Type: Multilayer, Shielding: Shielded, Mounting Type: Surface Mount, Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Package / Case: 0805 (2012 Metric), Tolerance: ±20%, Packaging: Tape & Reel (TR).
Інші пропозиції CIG21W4R7MNE
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CIG21W4R7MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 4.7UH 650MA 300MOHM SM Current Rating (Amps): 650 mA Inductance: 4.7 µH Inductance Frequency - Test: 1 MHz DC Resistance (DCR): 300mOhm Operating Temperature: -40°C ~ 125°C Type: Multilayer Shielding: Shielded Mounting Type: Surface Mount Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Package / Case: 0805 (2012 Metric) Tolerance: ±20% Packaging: Cut Tape (CT) |
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