CIG22L2R2MNE SAMSUNGEM
Виробник: SAMSUNGEMInductor Power Chip Shielded Multi-Layer 2.2uH 20% 1MHz Ferrite 1.3A 0.08Ohm DCR 1008 T/R
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Технічний опис CIG22L2R2MNE SAMSUNGEM
Description: FIXED IND 2.2UH 1.3A 80 MOHM SMD, Packaging: Tape & Reel (TR), Tolerance: ±20%, Package / Case: 1008 (2520 Metric), Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm), Mounting Type: Surface Mount, Shielding: Shielded, Type: Multilayer, Operating Temperature: -40°C ~ 125°C, DC Resistance (DCR): 80mOhm, Inductance Frequency - Test: 1 MHz, Supplier Device Package: 1008 (2520 Metric), Height - Seated (Max): 0.039" (1.00mm), Part Status: Obsolete, Inductance: 2.2 µH, Current Rating (Amps): 1.3 A.
Інші пропозиції CIG22L2R2MNE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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CIG22L2R2MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 2.2UH 1.3A 80 MOHM SMD Packaging: Tape & Reel (TR) Tolerance: ±20% Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 80mOhm Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 (2520 Metric) Height - Seated (Max): 0.039" (1.00mm) Part Status: Obsolete Inductance: 2.2 µH Current Rating (Amps): 1.3 A |
товару немає в наявності |
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CIG22L2R2MNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 2.2UH 1.3A 80 MOHM SMD Tolerance: ±20% Packaging: Cut Tape (CT) Package / Case: 1008 (2520 Metric) Size / Dimension: 0.098" L x 0.079" W (2.50mm x 2.00mm) Mounting Type: Surface Mount Shielding: Shielded Type: Multilayer Operating Temperature: -40°C ~ 125°C DC Resistance (DCR): 80mOhm Inductance Frequency - Test: 1 MHz Supplier Device Package: 1008 (2520 Metric) Height - Seated (Max): 0.039" (1.00mm) Part Status: Obsolete Inductance: 2.2 µH Current Rating (Amps): 1.3 A |
товару немає в наявності |