CIL21J4R7KNE Samsung Electro-Mechanics
Виробник: Samsung Electro-MechanicsInductor RF Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 0.03A 0.9Ohm DCR 0805 T/R
на замовлення 220 шт:
термін постачання 21-31 дні (днів)
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Технічний опис CIL21J4R7KNE Samsung Electro-Mechanics
Description: FIXED IND 4.7UH 30MA 900MOHM SMD, Tolerance: ±10%, Packaging: Tape & Reel (TR), Package / Case: 0805 (2012 Metric), Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm), Mounting Type: Surface Mount, Shielding: Shielded, Operating Temperature: -40°C ~ 85°C, DC Resistance (DCR): 900mOhm Max, Q @ Freq: 45 @ 10MHz, Frequency - Self Resonant: 35MHz, Material - Core: Ferrite, Inductance Frequency - Test: 10 MHz, Supplier Device Package: 0805 (2012 Metric), Height - Seated (Max): 0.057" (1.45mm), Part Status: Obsolete, Inductance: 4.7 µH, Current Rating (Amps): 30 mA.
Інші пропозиції CIL21J4R7KNE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CIL21J4R7KNE | Виробник : SAMSUNGEM |
Inductor RF Shielded Multi-Layer 4.7uH 10% 10MHz 45Q-Factor Ferrite 0.03A 0.9Ohm DCR 0805 T/R |
товар відсутній |
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| CIL21J4R7KNE | Виробник : Samsung Electro-Mechanics |
Description: FIXED IND 4.7UH 30MA 900MOHM SMD Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: 0805 (2012 Metric) Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm) Mounting Type: Surface Mount Shielding: Shielded Operating Temperature: -40°C ~ 85°C DC Resistance (DCR): 900mOhm Max Q @ Freq: 45 @ 10MHz Frequency - Self Resonant: 35MHz Material - Core: Ferrite Inductance Frequency - Test: 10 MHz Supplier Device Package: 0805 (2012 Metric) Height - Seated (Max): 0.057" (1.45mm) Part Status: Obsolete Inductance: 4.7 µH Current Rating (Amps): 30 mA |
товар відсутній |
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| CIL21J4R7KNE | Виробник : Samsung Electro-Mechanics |
Samsung CIL,Thin film,0805,4.7uH,-?,7 embossed,-10 10% |
товар відсутній |