CJD122 TR13 Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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Технічний опис CJD122 TR13 Central Semiconductor Corp
Description: TRANS NPN DARL 100V 8A DPAK, Power - Max: 1.75 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 8 A, Supplier Device Package: DPAK, Frequency - Transition: 4MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції CJD122 TR13
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
|
|
CJD122 TR13 | Central Semiconductor Corp |
Description: TRANS NPN DARL 100V 8A DPAK Power - Max: 1.75 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 8 A Supplier Device Package: DPAK Frequency - Transition: 4MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CJD122 TR13 | Central Semiconductor |
 Darlington Transistors DARLINGTON 100V 8A Bipolar SM Trans |
товару немає в наявності |
В кошику од. на суму грн. |
| CJD122 TR13 |
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 100V 8A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: TRANS NPN DARL 100V 8A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: DPAK
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| CJD122 TR13 |
|
Виробник: Central Semiconductor
Darlington Transistors DARLINGTON 100V 8A Bipolar SM Trans
Darlington Transistors DARLINGTON 100V 8A Bipolar SM Trans
товару немає в наявності
В кошику
од. на суму грн.