Технічний опис CMF10120D CREE
Description: SICFET N-CH 1200V 24A TO247, Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +25V, -5V, Drive Voltage (Max Rds On, Min Rds On): 20V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 134W (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 135°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції CMF10120D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
CMF10120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 24A TO247 Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -5V Drive Voltage (Max Rds On, Min Rds On): 20V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 134W (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 135°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CMF10120D | Wolfspeed | MOSFET ZFET 1X10A IDS 1200V ON 160MOHM SIC MOSFT |
товару немає в наявності |
В кошику од. на суму грн. |
| CMF10120D |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 134W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 24A TO247
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -5V
Drive Voltage (Max Rds On, Min Rds On): 20V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 500µA
Power Dissipation (Max): 134W (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.