Технічний опис CMF10120D CREE
Description: SICFET N-CH 1200V 24A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 135°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V, Power Dissipation (Max): 134W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V.
Інші пропозиції CMF10120D
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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CMF10120D | Wolfspeed, Inc. |
Description: SICFET N-CH 1200V 24A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 135°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V Power Dissipation (Max): 134W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CMF10120D | Wolfspeed | MOSFET ZFET 1X10A IDS 1200V ON 160MOHM SIC MOSFT |
товару немає в наявності |
В кошику од. на суму грн. |
| CMF10120D | Cree | Trans MOSFET N-CH SiC 1.2KV 24A 3-Pin(3+Tab) TO-247 |
товару немає в наявності |
Мінімальне замовлення: 600 шт В кошику од. на суму грн. |
| CMF10120D |
Виробник: Wolfspeed, Inc.
Description: SICFET N-CH 1200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 135°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V
Description: SICFET N-CH 1200V 24A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 135°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 20V
Power Dissipation (Max): 134W (Tc)
Vgs(th) (Max) @ Id: 4V @ 500µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 47.1 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 928 pF @ 800 V
товару немає в наявності
В кошику
од. на суму грн.