CMLDM8120G TR PBFREE Central Semiconductor
| Кількість | Ціна |
|---|---|
| 9+ | 36.74 грн |
| 11+ | 31.16 грн |
| 100+ | 20.25 грн |
| 500+ | 15.92 грн |
| 1000+ | 12.36 грн |
| 3000+ | 11.17 грн |
| 9000+ | 11.10 грн |
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Технічний опис CMLDM8120G TR PBFREE Central Semiconductor
Description: MOSFET P-CH 20V 860MA SOT563, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): 8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 860mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Інші пропозиції CMLDM8120G TR PBFREE за ціною від 12.28 грн до 49.49 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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CMLDM8120G TR PBFREE | Central Semiconductor Corp |
 Description: MOSFET P-CH 20V 860MA SOT563Current - Continuous Drain (Id) @ 25°C: 860mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): 8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V |
на замовлення 1451 шт: термін постачання 21-31 дні (днів) |
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| CMLDM8120G TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: MOSFET P-CH 20V 860MA SOT563
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
Description: MOSFET P-CH 20V 860MA SOT563
Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 3.56 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): 8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
на замовлення 1451 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.49 грн |
| 11+ | 29.73 грн |
| 100+ | 19.12 грн |
| 500+ | 13.66 грн |
| 1000+ | 12.28 грн |