CMPDM7002AHC TR PBFREE Central Semiconductor Corp
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 60V 1A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
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Технічний опис CMPDM7002AHC TR PBFREE Central Semiconductor Corp
Description: MOSFET N-CH 60V 1A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V.
Інші пропозиції CMPDM7002AHC TR PBFREE за ціною від 16.52 грн до 64.95 грн
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CMPDM7002AHC TR PBFREE | Central Semiconductor Corp |
Description: MOSFET N-CH 60V 1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 5193 шт: термін постачання 21-31 дні (днів) |
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CMPDM7002AHC TR PBFREE | Central Semiconductor |
MOSFETs 60V N-Ch Enh FET 60Vdg 20Vgs 350mW |
на замовлення 21589 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| CMPDM7002AHC TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: MOSFET N-CH 60V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 60V 1A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 220mOhm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 5193 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 64.95 грн |
| 10+ | 39.16 грн |
| 100+ | 25.42 грн |
| 500+ | 18.30 грн |
| 1000+ | 16.52 грн |
| CMPDM7002AHC TR PBFREE |
|
Виробник: Central Semiconductor
MOSFETs 60V N-Ch Enh FET 60Vdg 20Vgs 350mW
MOSFETs 60V N-Ch Enh FET 60Vdg 20Vgs 350mW
на замовлення 21589 шт:
термін постачання 21-30 дні (днів)