Технічний опис CMPT591E TR PBFREE Central Semiconductor
Description: 60V 1A 350MW SMD TRANSISTOR-SMAL, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-23, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 350 mW.
Інші пропозиції CMPT591E TR PBFREE
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
CMPT591E TR PBFREE | Виробник : Central Semiconductor Corp |
Description: 60V 1A 350MW SMD TRANSISTOR-SMAL Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 350 mW |
товару немає в наявності |
|
| CMPT591E TR PBFREE | Виробник : Central Semiconductor | Bipolar Transistors - BJT PNP Enhanced |
товару немає в наявності |