| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.45 грн |
| 10+ | 79.23 грн |
| 100+ | 46.05 грн |
| 500+ | 36.45 грн |
| 1000+ | 33.34 грн |
| 3000+ | 31.20 грн |
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Технічний опис CMS45N10H8-HF Comchip Technology
Description: MOSFET N-CH 100V 45A PPAK, Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: P-PAK (5x6), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 94.7W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.
Інші пропозиції CMS45N10H8-HF
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
CMS45N10H8-HF | Comchip Technology |
 Description: MOSFET N-CH 100V 45A PPAKInput Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: P-PAK (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 94.7W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
товару немає в наявності |
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| CMS45N10H8-HF |
|
Виробник: Comchip Technology
Description: MOSFET N-CH 100V 45A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-PAK (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 94.7W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: MOSFET N-CH 100V 45A PPAK
Input Capacitance (Ciss) (Max) @ Vds: 1003.9 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-PAK (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 94.7W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.