CMS80N03H8-HF Comchip Technology


QW-JTR102%20CMS80N03H8-HF%20RevA.pdf Виробник: Comchip Technology
Description: MOSFET N-CH 30V 80A DFN5X6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5x6 (PR-PAK)
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V
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Технічний опис CMS80N03H8-HF Comchip Technology

Description: MOSFET N-CH 30V 80A DFN5X6, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 2W (Ta), 53W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5x6 (PR-PAK), Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 25 V.

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CMS80N03H8-HF CMS80N03H8-HF Виробник : Comchip Technology QW_JTR102_CMS80N03H8_HF_RevA-1923895.pdf MOSFET MOSFET N-CH 30V 80A 53W PR-PAK
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