CPH3355-TL-H onsemi
Виробник: onsemiDescription: CPH3355 - SINGLE P-CHANNEL POWER
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: 3-CPH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
на замовлення 178801 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2535+ | 8.95 грн |
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Технічний опис CPH3355-TL-H onsemi
Description: ONSEMI - CPH3355-TL-H - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.156 ohm, CPH, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.5A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.6V, euEccn: NLR, Verlustleistung: 1W, Bauform - Transistor: CPH, Anzahl der Pins: 3Pins, Produktpalette: -, productTraceability: No, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.156ohm, SVHC: No SVHC (15-Jan-2018).
Інші пропозиції CPH3355-TL-H за ціною від 10.67 грн до 10.67 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||
|---|---|---|---|---|---|---|---|---|---|
| CPH3355-TL-H | Виробник : ONSEMI |
Description: ONSEMI - CPH3355-TL-H - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.156 ohm, CPH, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: CPH Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.156ohm SVHC: No SVHC (15-Jan-2018) |
на замовлення 170718 шт: термін постачання 21-31 дні (днів) |
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CPH3355-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 30V 2.5A 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V |
товару немає в наявності |
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CPH3355-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 30V 2.5A 3CPH Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 156mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V |
товару немає в наявності |