Технічний опис CPH3356-TL-H ON Semiconductor
Description: MOSFET P-CH 20V 2.5A 3CPH, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 137mOhm @ 1A, 4.5V, Power Dissipation (Max): 1W (Ta), Supplier Device Package: 3-CPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V.
Інші пропозиції CPH3356-TL-H
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| CPH3356-TL-H | Виробник : ON Semiconductor |
 Trans MOSFET P-CH 20V 2.5A 3-Pin CPH T/R |
товару немає в наявності |
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CPH3356-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 20V 2.5A 3CPH Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 137mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Supplier Device Package: 3-CPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
товару немає в наявності |