CS3M-E3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 2A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Технічний опис CS3M-E3/I Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 2A DO214AB, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 26pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Інші пропозиції CS3M-E3/I
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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CS3M-E3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 1000V 2A DO214AB Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 26pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CS3M-E3/I | Vishay General Semiconductor | Rectifiers If 3A Vrrm 1000V Ifsm 100A DO-214AC |
товару немає в наявності |
В кошику од. на суму грн. |
| CS3M-E3/I |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 2A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 1000V 2A DO214AB
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 26pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CS3M-E3/I |
Виробник: Vishay General Semiconductor
Rectifiers If 3A Vrrm 1000V Ifsm 100A DO-214AC
Rectifiers If 3A Vrrm 1000V Ifsm 100A DO-214AC
товару немає в наявності
В кошику
од. на суму грн.