Технічний опис CSA2M-E3/I Vishay General Semiconductor
Description: DIODE GEN PURP 1KV 1.6A DO214AC, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1.6A, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 2.1 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).
Інші пропозиції CSA2M-E3/I
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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CSA2M-E3/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1.6A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1000 V Part Status: Obsolete Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1.6A Capacitance @ Vr, F: 11pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2.1 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |