CSD13302WT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
| Кількість | Ціна |
|---|---|
| 250+ | 40.49 грн |
| 500+ | 35.27 грн |
| 750+ | 33.38 грн |
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Технічний опис CSD13302WT Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA, Part Status: Active, Supplier Device Package: 4-DSBGA (1x1), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, DSBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.
Інші пропозиції CSD13302WT за ціною від 44.99 грн до 111.84 грн
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CSD13302WT | Texas Instruments |
Description: MOSFET N-CH 12V 1.6A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Cut Tape (CT) |
на замовлення 1237 шт: термін постачання 21-31 дні (днів) |
|
| CSD13302WT |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Cut Tape (CT)
на замовлення 1237 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.84 грн |
| 10+ | 67.68 грн |
| 100+ | 44.99 грн |