CSD13385F5T Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET N-CH 12V 4.3A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V
на замовлення 27750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 250+ | 32.31 грн |
| 500+ | 28.15 грн |
| 750+ | 26.64 грн |
| 1250+ | 23.40 грн |
| 1750+ | 22.46 грн |
| 2500+ | 22.16 грн |
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Технічний опис CSD13385F5T Texas Instruments
Description: MOSFET N-CH 12V 4.3A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta), Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V.
Інші пропозиції CSD13385F5T за ціною від 25.10 грн до 104.79 грн
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CSD13385F5T | Виробник : Texas Instruments |
MOSFETs 12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection 3-PICOSTAR -55 to 150 |
на замовлення 3396 шт: термін постачання 21-30 дні (днів) |
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CSD13385F5T | Виробник : Texas Instruments |
Description: MOSFET N-CH 12V 4.3A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 900mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 6 V |
на замовлення 28836 шт: термін постачання 21-31 дні (днів) |
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| CSD13385F5T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Drain-source voltage: 12V Drain current: 7.1A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 41A Mounting: SMD кількість в упаковці: 1 шт |
товару немає в наявності |
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| CSD13385F5T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 7.1A; Idm: 41A; 1.4W; PICOSTAR3 Drain-source voltage: 12V Drain current: 7.1A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: 41A Mounting: SMD |
товару немає в наявності |