CSD15380F3 Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 20V 500MA 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1190mOhm @ 100mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.35V @ 2.5µA
Supplier Device Package: 3-PICOSTAR (0.69x0.60)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10.5 pF @ 10 V
| Кількість | Ціна |
|---|---|
| 3000+ | 4.72 грн |
| 6000+ | 4.09 грн |
| 9000+ | 3.86 грн |
| 15000+ | 3.38 грн |
| 21000+ | 3.24 грн |
| 30000+ | 3.10 грн |
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Технічний опис CSD15380F3 Texas Instruments
Description: MOSFET N-CH 20V 500MA 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFLGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Rds On (Max) @ Id, Vgs: 1190mOhm @ 100mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.35V @ 2.5µA, Supplier Device Package: 3-PICOSTAR (0.69x0.60), Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V, Vgs (Max): 10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.281 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10.5 pF @ 10 V.
Інші пропозиції CSD15380F3 за ціною від 3.73 грн до 23.52 грн
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CSD15380F3 | Texas Instruments |
Description: MOSFET N-CH 20V 500MA 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFLGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1190mOhm @ 100mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.35V @ 2.5µA Supplier Device Package: 3-PICOSTAR (0.69x0.60) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V Vgs (Max): 10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.281 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10.5 pF @ 10 V |
на замовлення 34988 шт: термін постачання 21-31 дні (днів) |
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CSD15380F3 | Texas Instruments |
MOSFETs 20-V N channel NexF ET power MOSFET si A A 595-CSD15380F3T |
на замовлення 7641 шт: термін постачання 21-30 дні (днів) |
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| CSD15380F3 | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 20V; 500mA; 500mW; PICOSTAR3; ESD Type of transistor: N-MOSFET Case: PICOSTAR3 Mounting: SMD Gate charge: 281pC Drain current: 0.5A Power dissipation: 0.5W Gate-source voltage: 10V Drain-source voltage: 20V Kind of channel: enhancement Version: ESD |
на замовлення 24000 шт: термін постачання 14-30 дні (днів) |
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| CSD15380F3 |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 20V 500MA 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1190mOhm @ 100mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.35V @ 2.5µA
Supplier Device Package: 3-PICOSTAR (0.69x0.60)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10.5 pF @ 10 V
Description: MOSFET N-CH 20V 500MA 3PICOSTAR
Packaging: Cut Tape (CT)
Package / Case: 3-XFLGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1190mOhm @ 100mA, 8V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.35V @ 2.5µA
Supplier Device Package: 3-PICOSTAR (0.69x0.60)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 8V
Vgs (Max): 10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.281 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10.5 pF @ 10 V
на замовлення 34988 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 22.52 грн |
| 23+ | 13.24 грн |
| 100+ | 8.32 грн |
| 500+ | 5.77 грн |
| 1000+ | 5.11 грн |
| CSD15380F3 |
|
Виробник: Texas Instruments
MOSFETs 20-V N channel NexF ET power MOSFET si A A 595-CSD15380F3T
MOSFETs 20-V N channel NexF ET power MOSFET si A A 595-CSD15380F3T
на замовлення 7641 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 14+ | 23.52 грн |
| 23+ | 14.13 грн |
| 100+ | 7.73 грн |
| 500+ | 5.73 грн |
| 1000+ | 5.04 грн |
| 3000+ | 4.21 грн |
| 6000+ | 3.73 грн |
| CSD15380F3 |
|
Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 20V; 500mA; 500mW; PICOSTAR3; ESD
Type of transistor: N-MOSFET
Case: PICOSTAR3
Mounting: SMD
Gate charge: 281pC
Drain current: 0.5A
Power dissipation: 0.5W
Gate-source voltage: 10V
Drain-source voltage: 20V
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 20V; 500mA; 500mW; PICOSTAR3; ESD
Type of transistor: N-MOSFET
Case: PICOSTAR3
Mounting: SMD
Gate charge: 281pC
Drain current: 0.5A
Power dissipation: 0.5W
Gate-source voltage: 10V
Drain-source voltage: 20V
Kind of channel: enhancement
Version: ESD
на замовлення 24000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 3.95 грн |