CSD16321Q5T Texas Instruments
Виробник: Texas Instruments
Description: 25-V, N CHANNEL NEXFET POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V
Power Dissipation (Max): 3.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V
Description: 25-V, N CHANNEL NEXFET POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V
Power Dissipation (Max): 3.1W (Ta), 113W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 93.01 грн |
500+ | 78.37 грн |
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Технічний опис CSD16321Q5T Texas Instruments
Description: 25-V, N CHANNEL NEXFET POWER MOS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V, Power Dissipation (Max): 3.1W (Ta), 113W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V.
Інші пропозиції CSD16321Q5T за ціною від 58.08 грн до 150.32 грн
Фото | Назва | Виробник | Інформація |
Доступність |
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CSD16321Q5T | Виробник : Texas Instruments |
Description: 25-V, N CHANNEL NEXFET POWER MOS Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V Power Dissipation (Max): 3.1W (Ta), 113W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V |
на замовлення 530 шт: термін постачання 21-31 дні (днів) |
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CSD16321Q5T | Виробник : Texas Instruments | MOSFET 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.6 mOhm 8-VSON-CLIP -55 to 150 |
на замовлення 707 шт: термін постачання 21-30 дні (днів) |
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CSD16321Q5T | Виробник : Texas Instruments | 25-V, N Channel Power MOSFET |
товар відсутній |
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CSD16321Q5T | Виробник : Texas Instruments | 25-V, N Channel Power MOSFET |
товар відсутній |
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CSD16321Q5T | Виробник : Texas Instruments | CSD16321Q5T |
товар відсутній |