CSD16342Q5A Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V
Відгуки про товар
Написати відгук
Технічний опис CSD16342Q5A Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V, Power Dissipation (Max): 3W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V.
Інші пропозиції CSD16342Q5A за ціною від 30.10 грн до 130.47 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD16342Q5A | Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V |
на замовлення 3261 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
 |
CSD16342Q5A | Texas Instruments |
MOSFETs N-Channel NexFET Pow er MOSFET |
на замовлення 4540 шт: термін постачання 21-30 дні (днів) |
|
| CSD16342Q5A |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 8V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 12.5 V
на замовлення 3261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 124.26 грн |
| 10+ | 75.68 грн |
| 100+ | 50.77 грн |
| 500+ | 37.61 грн |
| 1000+ | 34.39 грн |
| CSD16342Q5A |
|
Виробник: Texas Instruments
MOSFETs N-Channel NexFET Pow er MOSFET
MOSFETs N-Channel NexFET Pow er MOSFET
на замовлення 4540 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 130.47 грн |
| 10+ | 81.77 грн |
| 100+ | 47.43 грн |
| 500+ | 37.49 грн |
| 1000+ | 34.24 грн |
| 2500+ | 30.58 грн |
| 5000+ | 30.10 грн |