CSD16401Q5T Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
250+ | 125.03 грн |
500+ | 113.32 грн |
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Технічний опис CSD16401Q5T Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V.
Інші пропозиції CSD16401Q5T за ціною від 88.79 грн до 211.86 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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CSD16401Q5T | Виробник : Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V |
на замовлення 532 шт: термін постачання 21-31 дні (днів) |
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CSD16401Q5T | Виробник : Texas Instruments | MOSFET 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 2.3 mOhm 8-VSON-CLIP -55 to 150 |
на замовлення 1580 шт: термін постачання 21-30 дні (днів) |
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CSD16401Q5T | Виробник : Texas Instruments | Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
товар відсутній |
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CSD16401Q5T | Виробник : Texas Instruments | Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16401Q5T | Виробник : Texas Instruments | Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
товар відсутній |
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CSD16401Q5T | Виробник : Texas Instruments | Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
товар відсутній |
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CSD16401Q5T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W Case: VSON-CLIP8 Mounting: SMD Application: automotive industry Pulsed drain current: 240A Drain-source voltage: 25V Drain current: 100A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: -12...16V кількість в упаковці: 1 шт |
товар відсутній |
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CSD16401Q5T | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W Case: VSON-CLIP8 Mounting: SMD Application: automotive industry Pulsed drain current: 240A Drain-source voltage: 25V Drain current: 100A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 156W Polarisation: unipolar Kind of package: reel; tape Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: -12...16V |
товар відсутній |