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CSD17305Q5A

CSD17305Q5A Texas Instruments

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Виробник: Texas Instruments
MOSFETs 30V N Channel NexFET Power MOSFET
на замовлення 3466 шт:
термін постачання 21-30 дні (днів)
КількістьЦіна без ПДВ
3+140.94 грн
10+111.14 грн
100+65.31 грн
500+52.81 грн
1000+47.29 грн
2500+44.11 грн
5000+42.46 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
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Технічний опис CSD17305Q5A Texas Instruments

Description: MOSFET N-CH 30V 29A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +10V, -8V, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 3.1W (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Інші пропозиції CSD17305Q5A

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
CSD17305Q5A CSD17305Q5A Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CSD17305Q5A CSD17305Q5A Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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CSD17305Q5A TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 3.1W; VSONP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 3.1W
Case: VSONP8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
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CSD17305Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a
CSD17305Q5A
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
CSD17305Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a
CSD17305Q5A
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 29A/100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 8V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
CSD17305Q5A suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17305q5a
Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 3.1W; VSONP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 3.1W
Case: VSONP8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.