CSD17306Q5A Texas Instruments

Description: MOSFET N-CH 30V 24A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): +10V, -8V, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.6V @ 250µA, Power Dissipation (Max): 3.2W (Ta), Rds On (Max) @ Id, Vgs: 3.7mOhm @ 22A, 8V, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).