CSD17308Q3T

Виробник: Texas Instruments
Description: MOSFET N-CH 30V 14A/44A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)

Виробник: Texas Instruments
MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 11.8 mOhm 8-VSON-CLIP -55 to 150

Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 167A; 2.7W; 3.3x3.3mm
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Technology: NexFET™
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Polarisation: unipolar
Gate charge: 3.9nC
Dimensions: 3.3x3.3mm
On-state resistance: 9.4mΩ
Power dissipation: 2.7W
Gate-source voltage: ±10V
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 167A

Виробник: Texas Instruments
Description: MOSFET N-CH 30V 14A/44A 8VSON
Rds On (Max) @ Id, Vgs: 10.3mOhm @ 10A, 8V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): +10V, -8V
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Part Status: Active
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 28W (Tc)