CSD17553Q5A Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 23.5A/100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3252 pF @ 15 V
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Технічний опис CSD17553Q5A Texas Instruments
Description: MOSFET N-CH 30V 23.5A/100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3252 pF @ 15 V.
Інші пропозиції CSD17553Q5A за ціною від 49.21 грн до 158.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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CSD17553Q5A | Texas Instruments |
Description: MOSFET N-CH 30V 23.5A/100A 8VSON Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3252 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.1W (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
на замовлення 3583 шт: термін постачання 21-31 дні (днів) |
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| CSD17553Q5A |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 23.5A/100A 8VSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 23.5A/100A 8VSON
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.5A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
на замовлення 3583 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 158.59 грн |
| 10+ | 97.66 грн |
| 50+ | 73.73 грн |
| 100+ | 61.93 грн |
| 500+ | 49.21 грн |