Інші пропозиції CSD17570Q5BT /Texas Instruments за ціною від 80.17 грн до 263.46 грн
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CSD17570Q5BT | Texas Instruments |
 Description: MOSFET N-CH 30V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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CSD17570Q5BT | Texas Instruments |
MOSFET 30V N-Ch Pwr MOSFET |
на замовлення 6707 шт: термін постачання 21-30 дні (днів) |
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CSD17570Q5BT | Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V |
на замовлення 812 шт: термін постачання 21-31 дні (днів) |
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| CSD17570Q5BT |
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Виробник: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 250+ | 106.54 грн |
| 500+ | 94.45 грн |
| 750+ | 90.30 грн |
| CSD17570Q5BT |
|
Виробник: Texas Instruments
MOSFET 30V N-Ch Pwr MOSFET
MOSFET 30V N-Ch Pwr MOSFET
на замовлення 6707 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 214.14 грн |
| 10+ | 176.31 грн |
| 100+ | 121.66 грн |
| 250+ | 94.24 грн |
| 500+ | 87.20 грн |
| 1000+ | 80.17 грн |
| CSD17570Q5BT |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
Description: MOSFET N-CH 30V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 0.69mOhm @ 50A, 10V
Power Dissipation (Max): 3.2W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 15 V
на замовлення 812 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 263.46 грн |
| 10+ | 165.70 грн |
| 100+ | 115.77 грн |