CSD17576Q5BT TEXAS INSTRUMENTS
Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 125W; VSON-CLIP8; 5x6mm
Gate-source voltage: ±20V
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
Case: VSON-CLIP8
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 25nC
On-state resistance: 2.4mΩ
Dimensions: 5x6mm
Power dissipation: 125W
Drain current: 100A
Drain-source voltage: 30V
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Технічний опис CSD17576Q5BT TEXAS INSTRUMENTS
Description: MOSFET N-CH 30V 100A 8VSON, Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 125W (Tc).
Інші пропозиції CSD17576Q5BT за ціною від 41.01 грн до 136.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CSD17576Q5BT | Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSONRds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 3.1W (Ta), 125W (Tc) |
на замовлення 10250 шт: термін постачання 21-31 дні (днів) |
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CSD17576Q5BT | Texas Instruments |
Description: MOSFET N-CH 30V 100A 8VSONVgs(th) (Max) @ Id: 1.8V @ 250µA Packaging: Cut Tape (CT) Power Dissipation (Max): 3.1W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) |
на замовлення 10477 шт: термін постачання 21-31 дні (днів) |
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CSD17576Q5BT | Texas Instruments |
MOSFETs 30V, N-channel NexFET Pwr MOSFET |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| CSD17576Q5BT |
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Виробник: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Description: MOSFET N-CH 30V 100A 8VSON
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
на замовлення 10250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 73.78 грн |
| 500+ | 60.80 грн |
| 1250+ | 49.53 грн |
| 2500+ | 43.76 грн |
| 6250+ | 41.67 грн |
| CSD17576Q5BT |
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Виробник: Texas Instruments
Description: MOSFET N-CH 30V 100A 8VSON
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Description: MOSFET N-CH 30V 100A 8VSON
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Packaging: Cut Tape (CT)
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Input Capacitance (Ciss) (Max) @ Vds: 4430 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
на замовлення 10477 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 117.27 грн |
| 10+ | 92.21 грн |
| 100+ | 71.73 грн |
| CSD17576Q5BT |
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Виробник: Texas Instruments
MOSFETs 30V, N-channel NexFET Pwr MOSFET
MOSFETs 30V, N-channel NexFET Pwr MOSFET
на замовлення 250 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 136.11 грн |
| 10+ | 91.30 грн |
| 100+ | 46.53 грн |
| 500+ | 41.01 грн |




