на замовлення 44 шт:
термін постачання 5 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 53.16 грн |
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Технічний опис CSD17579Q3AT Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (3x3.3), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 29W (Tc), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції CSD17579Q3AT за ціною від 44.67 грн до 143.90 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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CSD17579Q3AT | Texas Instruments |
 Description: MOSFET N-CH 30V 20A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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CSD17579Q3AT | Texas Instruments |
Description: MOSFET N-CH 30V 20A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (3x3.3) Vgs(th) (Max) @ Id: 1.9V @ 250µA Power Dissipation (Max): 3.2W (Ta), 29W (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 1344 шт: термін постачання 21-31 дні (днів) |
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CSD17579Q3AT | Texas Instruments |
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A |
на замовлення 475 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| CSD17579Q3AT |
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Виробник: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 53.82 грн |
| 750+ | 44.67 грн |
| CSD17579Q3AT |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (3x3.3)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.90 грн |
| 10+ | 88.41 грн |
| 50+ | 66.54 грн |
| 100+ | 52.67 грн |
| CSD17579Q3AT |
|
Виробник: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD1757 A 595-CSD17579Q3A
на замовлення 475 шт:
термін постачання 21-30 дні (днів)