CSD17581Q3AT

Виробник: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V

Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 63W; VSONP8; 3.3x3.3mm
Power dissipation: 63W
Gate charge: 20nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Dimensions: 3.3x3.3mm
Kind of package: reel; tape
Case: VSONP8
On-state resistance: 3.9mΩ
Mounting: SMD

Виробник: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 16A, 10V
Power Dissipation (Max): 2.8W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-VSONP (3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 15 V

Виробник: Texas Instruments
MOSFETs 30V N-Channel NexFET A 595-CSD17581Q3A A A 595-CSD17581Q3A