CSD18511KCS Texas Instruments

Description: MOSFET N-CH 40V 194A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 188W (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 194A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.