CSD18533Q5AT Texas Instruments

Description: MOSFET N-CH 60V 17A/100A 8VSON, Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN.