Інші пропозиції CSD18535KCS за ціною від 78.36 грн до 259.65 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD18535KCS | TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 1.6mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 119 шт: термін постачання 14-30 дні (днів) |
|
||||||||||||
 |
CSD18535KCS | Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V |
на замовлення 2753 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
 |
CSD18535KCS | Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET si |
на замовлення 470 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| CSD18535KCS |
|
Виробник: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.6mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 246.01 грн |
| 10+ | 154.80 грн |
| 50+ | 130.54 грн |
| CSD18535KCS |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Description: MOSFET N-CH 60V 200A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
на замовлення 2753 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 259.65 грн |
| 50+ | 126.90 грн |
| 100+ | 114.97 грн |
| 500+ | 88.27 грн |
| 1000+ | 81.96 грн |
| 2000+ | 78.36 грн |
| CSD18535KCS |
|
Виробник: Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET si
MOSFETs 60-V N channel NexF ET power MOSFET si
на замовлення 470 шт:
термін постачання 21-30 дні (днів)