Інші пропозиції CSD18536KCS за ціною від 127.63 грн до 383.21 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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CSD18536KCS | TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 375W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
на замовлення 359 шт: термін постачання 14-30 дні (днів) |
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CSD18536KCS | Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
на замовлення 1530 шт: термін постачання 21-31 дні (днів) |
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| CSD18536KCS |
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Виробник: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 375W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
на замовлення 359 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 295.58 грн |
| 3+ | 256.89 грн |
| 10+ | 222.58 грн |
| 25+ | 191.62 грн |
| 50+ | 184.09 грн |
| CSD18536KCS |
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Виробник: Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 60V 200A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
на замовлення 1530 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 383.21 грн |
| 50+ | 192.58 грн |
| 100+ | 175.50 грн |
| 500+ | 136.64 грн |
| 1000+ | 127.63 грн |