Технічний опис CSD18540Q5BT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V, Power Dissipation (Max): 3.1W (Ta), 195W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V.
Інші пропозиції CSD18540Q5BT
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| CSD18540Q5BT | Texas Instruments |
 MOSFET 60V, N-channel NexFET Pwr MOSFET Транзистори |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
CSD18540Q5BT | Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. |
|
|
CSD18540Q5BT | Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CSD18540Q5BT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 188W Case: VSON-CLIP8 Gate-source voltage: ±20V Mounting: SMD Gate charge: 41nC Kind of channel: enhancement Dimensions: 5x6mm Kind of package: reel; tape On-state resistance: 1.8mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |
 |
CSD18540Q5BT | TEXAS INSTRUMENTS |
Description: TEXAS INSTRUMENTS - CSD18540Q5BT - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0018 ohm, VSON, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 100 Rds(on)-Messspannung Vgs: 10 MSL: - Verlustleistung Pd: 195 Bauform - Transistor: VSON Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0018 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.9 SVHC: No SVHC (17-Jan-2022) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
CSD18540Q5BT | Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. |
|
|
CSD18540Q5BT | Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. |
| CSD18540Q5BT |
|
Виробник: Texas Instruments
MOSFET 60V, N-channel NexFET Pwr MOSFET Транзистори
MOSFET 60V, N-channel NexFET Pwr MOSFET Транзистори
товару немає в наявності
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4230 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
Dimensions: 5x6mm
Kind of package: reel; tape
On-state resistance: 1.8mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 188W; VSON-CLIP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 188W
Case: VSON-CLIP8
Gate-source voltage: ±20V
Mounting: SMD
Gate charge: 41nC
Kind of channel: enhancement
Dimensions: 5x6mm
Kind of package: reel; tape
On-state resistance: 1.8mΩ
товару немає в наявності
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD18540Q5BT - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0018 ohm, VSON, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 100
Rds(on)-Messspannung Vgs: 10
MSL: -
Verlustleistung Pd: 195
Bauform - Transistor: VSON
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0018
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.9
SVHC: No SVHC (17-Jan-2022)
Description: TEXAS INSTRUMENTS - CSD18540Q5BT - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 0.0018 ohm, VSON, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 100
Rds(on)-Messspannung Vgs: 10
MSL: -
Verlustleistung Pd: 195
Bauform - Transistor: VSON
Anzahl der Pins: 8
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0018
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 1.9
SVHC: No SVHC (17-Jan-2022)
товару немає в наявності
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.
| CSD18540Q5BT |
|
Виробник: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSON-CLIP EP T/R
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.