CSD18541F5T Texas Instruments
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 34.22 грн |
| 500+ | 32.06 грн |
| 750+ | 30.79 грн |
| 1250+ | 29.52 грн |
| 1750+ | 27.17 грн |
| 2500+ | 25.93 грн |
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Технічний опис CSD18541F5T Texas Instruments
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR, Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 3-PICOSTAR, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 500mW (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR).
Інші пропозиції CSD18541F5T за ціною від 22.95 грн до 87.59 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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CSD18541F5T | Texas Instruments |
 Description: MOSFET N-CH 60V 2.2A 3PICOSTARInput Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead Packaging: Tape & Reel (TR) |
на замовлення 21500 шт: термін постачання 21-31 дні (днів) |
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CSD18541F5T | Texas Instruments |
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Packaging: Cut Tape (CT) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 3-PICOSTAR Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-SMD, No Lead |
на замовлення 21639 шт: термін постачання 21-31 дні (днів) |
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CSD18541F5T | Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET sin A 595-CSD18541F5 |
на замовлення 2303 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| CSD18541F5T |
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Виробник: Texas Instruments
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
на замовлення 21500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 250+ | 36.66 грн |
| 500+ | 30.69 грн |
| 750+ | 29.26 грн |
| 1250+ | 26.54 грн |
| 1750+ | 26.44 грн |
| 2500+ | 25.86 грн |
| 6250+ | 23.84 грн |
| 12500+ | 22.95 грн |
| CSD18541F5T |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Description: MOSFET N-CH 60V 2.2A 3PICOSTAR
Input Capacitance (Ciss) (Max) @ Vds: 777 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 3-PICOSTAR
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
на замовлення 21639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.59 грн |
| 10+ | 62.06 грн |
| 100+ | 35.30 грн |
| CSD18541F5T |
|
Виробник: Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET sin A 595-CSD18541F5
MOSFETs 60-V N channel NexF ET power MOSFET sin A 595-CSD18541F5
на замовлення 2303 шт:
термін постачання 21-30 дні (днів)