CSD18542KTT Texas Instruments
Виробник: Texas InstrumentsDescription: MOSFET N-CH 60V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 91.09 грн |
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Технічний опис CSD18542KTT Texas Instruments
Description: MOSFET N-CH 60V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.
Інші пропозиції CSD18542KTT за ціною від 67.75 грн до 176.69 грн
| Фото | Назва | Виробник | Інформація |
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CSD18542KTT | Виробник : Texas Instruments |
Description: MOSFET N-CH 60V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
на замовлення 856 шт: термін постачання 21-31 дні (днів) |
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CSD18542KTT | Виробник : Texas Instruments |
MOSFET 60-V, N channel NexFET™ power MOSFET, single D2PAK, 4 mOhm 2-DDPAK/TO-263 -55 to 175 |
на замовлення 698 шт: термін постачання 21-30 дні (днів) |
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CSD18542KTT | Виробник : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R |
товар відсутній |
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| CSD18542KTT | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| CSD18542KTT | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |