CSD19501KCS Texas Instruments
Виробник: Texas Instruments
Transistor N-Channel MOSFET; 80V; 20V; 7,9mOhm; 129A; 217W; -55°C ~ 175°C; CSD19501KCS TCSD19501kcs
кількість в упаковці: 10 шт
на замовлення 7 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 77.99 грн |
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Технічний опис CSD19501KCS Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.2V @ 250µA, Power Dissipation (Max): 217W (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції CSD19501KCS за ціною від 61.16 грн до 220.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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CSD19501KCS | Texas Instruments |
Description: MOSFET N-CH 80V 100A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.2V @ 250µA Power Dissipation (Max): 217W (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
на замовлення 684 шт: термін постачання 21-31 дні (днів) |
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CSD19501KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3 Kind of package: tube Kind of channel: enhancement Mounting: THT Polarisation: unipolar Technology: NexFET™ Type of transistor: N-MOSFET Case: TO220-3 Gate charge: 38nC Heatsink thickness: 1.14...1.4mm On-state resistance: 5.5mΩ Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Power dissipation: 217W |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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CSD19501KCS | Texas Instruments |
Description: MOSFET N-CH 80V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
на замовлення 922 шт: термін постачання 21-31 дні (днів) |
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CSD19501KCS | Texas Instruments |
MOSFETs 80V N-CH NexFET Pwr MOSFET |
на замовлення 408 шт: термін постачання 21-30 дні (днів) |
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| CSD19501KCS |
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Виробник: Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 217W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 80V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 217W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 684 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 183+ | 109.19 грн |
| CSD19501KCS |
|
Виробник: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Technology: NexFET™
Type of transistor: N-MOSFET
Case: TO220-3
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 217W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Technology: NexFET™
Type of transistor: N-MOSFET
Case: TO220-3
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 217W
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 168.24 грн |
| 10+ | 90.58 грн |
| 25+ | 82.27 грн |
| 50+ | 79.77 грн |
| CSD19501KCS |
|
Виробник: Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
на замовлення 922 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 186.39 грн |
| 50+ | 96.13 грн |
| 100+ | 83.57 грн |
| 500+ | 62.75 грн |
| CSD19501KCS |
|
Виробник: Texas Instruments
MOSFETs 80V N-CH NexFET Pwr MOSFET
MOSFETs 80V N-CH NexFET Pwr MOSFET
на замовлення 408 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 220.68 грн |
| 10+ | 141.31 грн |
| 100+ | 90.43 грн |
| 500+ | 75.25 грн |
| 1000+ | 64.68 грн |
| 2500+ | 61.16 грн |