CSD19502Q5BT Texas Instruments
Виробник: Texas Instruments
Description: MOSFET N-CH 80V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V
Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V
| Кількість | Ціна |
|---|---|
| 250+ | 110.27 грн |
| 500+ | 97.86 грн |
| 750+ | 93.62 грн |
| 1250+ | 83.38 грн |
| 1750+ | 80.73 грн |
| 2500+ | 78.16 грн |
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Технічний опис CSD19502Q5BT Texas Instruments
Description: MOSFET N-CH 80V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V, Power Dissipation (Max): 3.1W (Ta), 195W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V.
Інші пропозиції CSD19502Q5BT за ціною від 86.73 грн до 270.86 грн
| Фото | Назва | Виробник | Інформація |
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CSD19502Q5BT | Виробник : Texas Instruments |
MOSFETs N-Channel 3.4mOhm 8 0V A 595-CSD19502Q5B A 595-CSD19502Q5B |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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CSD19502Q5BT | Виробник : Texas Instruments |
Description: MOSFET N-CH 80V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
на замовлення 6428 шт: термін постачання 21-31 дні (днів) |
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CSD19502Q5BT | Виробник : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
товару немає в наявності |
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CSD19502Q5BT | Виробник : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
товару немає в наявності |
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| CSD19502Q5BT | Виробник : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 195W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 195W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
товару немає в наявності |